MBRF30H150CTG, MBR30H150CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
150
V
Average Rectified Forward Current (Per Leg)
(Rated VR) TC
= 124
°C (Per Device)
IF(AV)
15
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
?20 to +150
°C
Storage Temperature
Tstg
?65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR30H150CTG)
?
Junction
?to?Case
?
Junction
?to?Ambient
(MBRF30H150CTG)
?
Junction
?to?Case
RJC
RJA
RJC
2.0
45
2.5
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 5 A, T
C
= 25
°C)
(IF
= 5 A, T
C
= 125
°C)
(IF
= 15 A, T
C
= 25
°C)
(IF
= 15 A, T
C
= 125
°C)
vF
0.69
0.55
0.98
0.68
0.75
0.60
1.11
0.73
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
60
50
A
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping?
MBRF30H150CTG
TO?220FP
(Pb?Free)
50 Units / Rail
MBR30H150CTG
TO?220
(Pb?Free)
50 Units / Rail
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
相关PDF资料
MBR30H60CTG DIODE SCHOTTKY 30A 60V TO-220AB
MBR30L45CTG DIODE SCHOTTKY 30A 45V TO-220AB
MBR30L60CTG DIODE SCHOTTKY 60V 15A TO220-3
MBR4015CTL DIODE SCHOTTKY 15V 20A TO220AB
MBR4015LWT DIODE SCHOTTKY 15V 20A TO-247
MBR4045PT DIODE SCHOTTKY 45V 20A SOT-93
MBR4045WTG DIODE SCHOTTKY 45V 20A TO-247AC
MBR4050PT-E3/45 DIODE SCHOTTKY 40A 50V DUAL
相关代理商/技术参数
MBR30H30CTG 功能描述:二极管 - 通用,功率,开关 30A/30V H-SERIES TO-220 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MBR30H35CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers
MBR30H35CT-E3/45 功能描述:肖特基二极管与整流器 35 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H35PT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBR30H35PT-E3/45 功能描述:肖特基二极管与整流器 30 Amp 35 Volt Dual 200 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H45CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Schottky Rectifiers
MBR30H45CT/45 功能描述:肖特基二极管与整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR30H45CT-E3/45 功能描述:肖特基二极管与整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel